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| TE13004D * TE13005D Silicon NPN High Voltage Switching Transistor Features D Monolithic integrated C-E-free-wheel diode D HIGH SPEED technology D Planar passivation D Very short switching times D Very low switching losses D www..com Very low dynamic saturation D Very low operating temperature D High reverse voltage 14283 Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Type TE13004D TE13005D TE13004D TE13005D Symbol VCEO VCEO VCES VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 300 400 600 700 9 6 8 2 4 57 150 -65 to +150 Unit V V V V V A A A A W C C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase 25C Maximum Thermal Resistance Tcase = 25C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 2.2 Unit K/W TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 1 (9) TE13004D * TE13005D Electrical Characteristics Tcase = 25C, unless otherwise specified Parameter Transistor Collector cut-off current Test Conditions VCE = 600 V VCE = 700 V VCE = 600 V; Tcase = 150C VCE = 700 V; Tcase = 150C IC = 100 mA; L = 125 mH; Imeasure = 100 mA IE = 1 mA IC = 2 A; IB = 0.4 A IC = 2 A; IB = 0.4 A VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 1 A VCE = 2 V; IC = 4 A IC = 2 A; IB = 0.2 A; t = 1 m s IC = 2 A; IB = 0.2 A; t = 3 m s VCE = 10 V; IC = 500 mA; f = 1 MHz IF = 2 A IF = 2 A; diF/dt = 10 A/m s IF = 2 A; diF/dt = 5 A/m s; VS = 200 V Type Symbol Min Typ Max 50 50 0.5 0.5 300 400 9 0.5 1.6 10 10 4 2.5 0.6 4 V V MHz Unit mA mA Collector-emitter breakdown voltage (figure www..com 1) Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC forward current transfer ratio Dynamic saturation y voltage Gain bandwidth product Free-wheel diode Forward voltage Turn-on transient peak voltage Reverse recovery current TE13004D ICES TE13005D ICES TE13004D ICES TE13005D ICES TE13004D V(BR)CEO TE13005D V(BR)CEO V(BR)EBO VCEsat VBEsat hFE hFE hFE VCEsatdyn VCEsatdyn fT mA mA V V V V V VF VFP IRM 1.2 4 4 1.5 5 V V A 2 (9) TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 TE13004D * TE13005D Switching Characteristics Tcase = 25C, unless otherwise specified Parameter Test Conditions Resistive load (figure 3) Turn on time IC = 2 A; IB1 = -IB2 = 0.4 A; ; ; VS = 125 V Storage time Fall time Inductive load (figure 4) Storage time IC = 2 A; IB1 = 0.4 A; L = 200 m H; Vclamp = 300 V; l Cross over time -VBE = 5 V; Tcase = 100C www..com Free-wheel diode Reverse recovery time IF = 0.5 A; IR = 1 A; iR = 0.25 A Forward recovery time IF = 2 A; diF/dt = 10 A/m s Reverse recovery time IF = 2 A; -diF/dt = 5 A/m s y ; m Type Symbol ton ts tf ts tc trr tfr trr tIRM Min Typ 0.25 1.5 0.15 1.2 0.4 0.7 0.4 1.1 0.9 Max 0.4 2.5 0.3 2 0.7 1 Unit ms ms ms ms ms ms ms ms ms 95 9666 VF VFP 110% 100% t tfr Figure 1. Turn on transient peak voltage TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 3 (9) TE13004D * TE13005D 94 8863 IC V S2 + 10 V IB Imeasure w IC 5 IC LC V S1 + 0 to 30 V www..com 3 Pulses + VCE V(BR)CEO 100 mW V(BR)CEO I(BR)R tp T tp + 0.1 + 10 ms Figure 2. Test circuit for V(BR)CE0 94 8852 IB IB1 0 t RC -IB2 IC (1) IB1 RB VBB + VCE IB VCC IC 0.9 IC 0.1 IC tr td ton t ts toff tf (1) Fast electronic switch Figure 3. Test circuit for switching characteristics - resistive load 4 (9) TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 TE13004D * TE13005D 94 8853 IB IB1 LC 0 -IB2 IC (1) IB1 www..com RB VBB IB VCE Vclamp (2) IC VCC 0.9 IC t + (1) Fast electronic switch (2) Fast recovery rectifier 0.1 IC t ts tr Figure 4. Test circuit for switching characteristics - inductive load TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 5 (9) TE13004D * TE13005D Typical Characteristics (Tcase = 25_ C unless otherwise specified) 100 P tot - Total Power Dissipation ( W ) 2.2 K/W 10 12.5 K/W IC - Collector Current ( A ) 10 100 TE13004D TE13005D tp=10m s 50m s 1 100m s 500m s 0.1 tp/Tv 0.01 Tcase = 25C 0.01 0 95 10602 1 25 K/W 0.1 50 K/W RthJA = 85 K/W 0.01 www..com 0.001 25 50 75 1ms 5ms DC 100 1000 10000 100 125 150 95 10965 1 10 Tcase ( C ) VCE - Collector Emitter Voltage ( V ) Figure 5. Ptot vs.Tcase - Collector Emitter Saturation Voltage (V) 10 10 Figure 8. IC vs. VCE - Base Emitter Saturation Voltage (V) 1 2A 4A Tcase = 25C IC = 8A 1 0.5A 1A 4A 2A 0.1 IC = 0.5A 1A CEsat T = 25C 0.01 case 0.01 0.1 BEsat 1 10 95 9788 0.1 0.01 V 0.1 1 10 V 95 9789 IB - Base Current (A) IB - Base Current (A) Figure 6. VCEsat vs. IB 100 - Forward DC Current Transfer Ratio - Forward DC Current Transfer Ratio 25 Figure 9. VBEsat vs. IB Tcase = 25C 20 0.5A 15 1A 2A 10 5 0 0 2 4 6 8 10 VCE - Collector Emitter Voltage (V) IC = 4A Tcase = 25C 10V 10 5V VCE = 2V FE h 1 0.01 0.1 1 10 95 9786 95 9785 IC - Collector Current (A) Figure 7. hFE vs. IC h FE Figure 10. hFE vs. VCE 6 (9) TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 TE13004D * TE13005D 10 t s ,t f - Switching Times ( m s ) R-load 1 ts t s ,t f - Switching Times ( m s ) 10 R-load 1 ts 0.1 tf hFE = 5 IB1 = -IB2 Tcase = 25C 0 1 2 3 4 5 0.1 tf IC = 2A IB1 = 0.4A Tcase = 25C 0 1 2 3 -IB2/IB1 4 5 www..com 0.01 0.01 95 9909 95 9908 IC - Collector Current ( A ) Figure 11. ts, tf vs. IC 10 t s ,t f - Switching Times ( m s ) L-load 1 ts t s ,t f - Switching Times ( m s ) 10 Figure 14. ts, tf vs. -IB2/IB1 ts 1 L-load 0.1 tf hFE = 5 IB1 = -IB2 Tcase = 25C 0.1 tf IC = 2A IB1 = 0.4A Tcase = 25C 0 1 2 3 -IB2/IB1 4 5 0.01 0 95 9910 0.01 1 2 3 4 5 95 9911 IC - Collector Current ( A ) Figure 12. ts, tf vs. IC Z thp - Thermal Resistance for Pulse Cond. ( K/W ) 10 DC 1 tp/T = 0.5 Figure 15. Error during Connect - 6107 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.01 0.1 1 10 100 95 10962 tp - Pulse Length ( ms ) Figure 13. TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 7 (9) TE13004D * TE13005D Dimensions in mm www..com 14277 8 (9) TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 TE13004D * TE13005D Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. ozone www..com depleting We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 9 (9) |
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